Analytical and experimental determination of the parasitic parameters in high-frequency inductor

Author:

Zdanowski M.,Barlik R.

Abstract

Abstract The paper presents the results of calculations, simulations, and measurements of parasitic capacitance of winding in ferrite inductor suitable for cooperating with 2 kW DC-DC boost converter built using SiC JFET transistors, operating with a switching frequency of 100 kHz. The inductor winding is made of litz wire in a two-layer configuration. The lumped model of inductor winding was adopted. The results of analytical calculations have been compared with the results obtained from experimental investigations based on the resonance effect.

Publisher

Walter de Gruyter GmbH

Subject

Artificial Intelligence,Computer Networks and Communications,General Engineering,Information Systems,Atomic and Molecular Physics, and Optics

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