Si-Oberflächensperrschichtzähler in hohen Magnetfeldern bei 4,2 °K

Abstract

Abstract A n-type silicon surface barrier detector was examined at 4,2 °K in longitudinal and transversal magnetic fields up to 60 kOe. Particularly in transversal magnetic fields and at low reverse bias a severe deterioration of resolution and an increase of pulse rise times is effected by the altered charge collection. The increased recombination probability results in a considerable loss of charge.