Zur kontaktlosen Messung des elektrischen Widerstandes dünner Schichten. Berechnung des Einflusses der Schichtgeometrie / Contactless measuring of the electric resistance of tnin films. Calculation of the influence of filmgeometry

Abstract

Abstract Using the formerly described nondestructive method for contactless measuring electric resistances, the film in question is brought in parallel position to a metalplate. The reactance 1/Z of this arrangement is a function of (ω R⃞ C), the product of measuring frequency, resistance per unit area of the film and capacity of the arrangement. With decreasing ω or R the imaginary part of 1/Z rises from 0 to C while the real part passes through a distinct maximum for K=(ω R⃞ C)max·K depends strongly on the geometry of the film. Exact knowledge of K with known ω and C al-lows to determine R⃞ . Therefore 1/Z has been calculated as function of (ω R⃞ C) for the most usual geometries of thin films.