Zur Theorie der Auger-Prozesse in III — V-Halbleitern

Abstract

Abstract This paper presents a calculation of the lifetimes of excess electrons in the III -V compounds InSb, InAs and GaSb, assuming the Auger effect between bands. Following the theory of Beattie and Landsberg matrix elements are calculated by using approximate wave functions instead of Bloch functions. The ninefold integration of the transition probability can be reduced to a four-fold one which then is numerically calculated with the aid of a computer. The results are compared with the lifetimes of radiative transitions. It is shown that the Auger processes are dominant in small gap semiconductors, but not in semiconductors with larger gaps (more than about 0.5 eV).