Application des Lois de Penetration de Makhov a la Conductibilite Induite par Bombardement Electronique dans des Couches Minces de ZnS

Abstract

Abstract Al-ZnS-Al cells withstanding fields of 106 V cm -1 were studied; their resistivity being of 1014 Ω • cm. The induced conductibility is related to Makhov's law of the absorption of the electronic flux. The distribution of the secondary charge carriers and the electric field inside of the layer are given. The experimental results agree with Makhov's law. It is possible therefore to express the dependence of the range in the thin ZnS layer upon the energy of the bombarding electrons: R = 95 E01,8, where R is expressed in Å and E0 in kV. The optimal conditions for the gain as a function of the energy of the electronic flux, the thickness, and the quality of the layer are given.