Zur Bestimmung der effektiven Masse von Ladungsträgern in ZnS

Author:

Schanda J.1,Gergely G.1,Gál M.1

Affiliation:

1. 1Forschungsinstitut für Technische Physik der Ungar. Akademie der Wissenschaften, Budapest

Abstract

The reduced effective mass m* of the carriers in ZnS was determined b y means of the Franz- Keldysh-effect. The field dependence of the band gap was calculated using the field dependence of transmission and the slope of the absorption curve. The values of TO* for field directions F Ⅱ c and F ⊥ c and for light polarised E Ⅱ c and E ⊥ c are in the order of 0.02 m0- This is unexpected because this value is one order of magnitude smaller than those of other II-VI compounds.

Publisher

Walter de Gruyter GmbH

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Franz-Keldysh effect and internal fields in ZnS crystals;Physical Review B;1974-07-15

2. Local levels in a zinc sulfide film;Soviet Physics Journal;1973-10

3. Negative resistance in an n-ZnS-p-GaAs heterojunction;Soviet Physics Journal;1973-09

4. Urbach rule;Physica Status Solidi (a);1971-11-16

5. On the Investigation of Electric Field Distribution in ZnS Crystals by the Help of Electroabsorption;physica status solidi (b);1970

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