Effect of carrier (hole) temperature on performance of optical amplifiers quantum dot structure-Reference-Cited by-同舟云学术

Effect of carrier (hole) temperature on performance of optical amplifiers quantum dot structure

Published:2022-11-28 Issue:0 Volume:0 Page:
ISSN:2191-6322
Container-title:Journal of Optical Communications
language:en
Short-container-title:

Author:

Ghazai Alaa Jabbar¹,Flayyih Ahmed H.²³,Attab Rasool R.⁴,Al-Khursan Amin H.³^ORCID

Affiliation:

1. Physics Department , Science College, Al-Nahrain University , Baghdad , Iraq

2. Applied Geology Department , Science College, University of Thi-Qar , Nassiriya , Iraq

3. Nassiriya Nanotechnology Research Laboratory (NNRL) , Science College, University of Thi-Qar , Nassiriya , Iraq

4. Physics Department , College for Pure Education, University of Kerbala , Kerbala , Iraq

Abstract

Abstract Carriers temperature in quantum dot (QD) optical amplifiers has been modelled theoretically taken into account hole contribution, which is not considered early. The contributions of wetting layer (WL), first excited state (ES1), and second excited state (ES2) have also been considered. Effect of WL−ES2 recombination time of both electrons and holes, carrier heating (CH) time of electrons and holes, in addition to electron hole recombination time are examined. The results show that there is a gap between electron and hole heating temperature due to the difference between there recovery times. It is found that fast hole (long electron) recombination time yield a high carrier temperature.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://www.degruyter.com/document/doi/10.1515/joc-2021-0252/pdf

Reference16 articles.

1. Xia, M, Ghafouri-Shiraz, H. Theoretical analysis of carrier heating effect in semiconductor optical amplifiers. Opt Quant Electron 2015;47:2141–53. https://doi.org/10.1007/s11082-014-0088-8.

2. Hussain, K, Varshney, SK, Datta, PK. Intraband effects on ultrafast pulse propagation in semiconductor optical amplifier. Pramana J Phys 2010;75:1011–6. https://doi.org/10.1007/s12043-010-0156-y.

3. Wang, J, Schweizer, HC. A quantitative comparison of the classical rate-equation model with the carrier heating model on dynamics of the quantum-well laser: the role of carrier energy relaxation, electron-hole interaction, and auger effect. IEEE J Quant Electron 1997;33:1350–9.

4. Nielsen, D, Chuang, SL. Four-wave mixing and wavelength conversion in quantum dots. Phys Rev B Condens Matter 2010;81:1–11. https://doi.org/10.1103/physrevb.81.035305.

5. Chin-Yi Tasi, CYT, Hwa Lo, Y, Spencer, RM. Effects of hot phonons on carrier heating in quantum-well laser. IEEE Photonics Lett 1995;7:950–2.