Performance parameters estimation of high speed Silicon/Germanium/InGaAsP avalanche photodiodes wide bandwidth capability in ultra high speed optical communication system-Reference-Cited by-同舟云学术

Performance parameters estimation of high speed Silicon/Germanium/InGaAsP avalanche photodiodes wide bandwidth capability in ultra high speed optical communication system

Published:2024-06-11 Issue: Volume: Page:
ISSN:0173-4911
Container-title:Journal of Optical Communications
language:en
Short-container-title:

Author:

Gopalan Anitha¹,Arulmozhi Arumugam Krishnan²,Pandian Manimaraboopathy Maruthu³,Mohanadoss Priscilla⁴,Dorairajan Nithya⁵,Balaji Morasa⁶,Taher Aziz Mahoumd⁷

Affiliation:

1. Department of ECE, Saveetha School of Engineering , Saveetha Institute of Medical and Technical Sciences, SIMATS, Saveetha University , Chennai , Tamil Nadu , India

2. Department of Mathematics , 305648 R.M.K. College of Engineering and Technology , Puduvoyal , Chennai , Tamil Nadu , India

3. Department of ECE , Vel Tech Rangarajan Dr. Sagunthala R&D Institute of Science Technology , Chennai , Tamil Nadu , India

4. Department of ECE , 483324 S.A. Engineering College , Chennai , Tamil Nadu , India

5. Department of ECE , Panimalar Engineering College , Chennai , Tamil Nadu , India

6. Department of ECE , Mohan Babu University (Erstwhile Sree Vidya Nikethan Engineering College) , Tirupati , Andhra Pradesh , India

7. Sakr Institute of Technology , Ismailla , Egypt

Abstract

Abstract This paper has clarified the performance parameters estimation of high speed silicon/germanium/InGaAsP avalanche photodiodes wide bandwidth capability in ultrahigh speed optical communication system. The basic structure configuration of avalanche photodiode is clarified. The basic depletion region configuration schematic view is demonstrated. As well as the maximum electric field is indicated for impact ionization through avalanche photodiode in the presence of load. Various avalanche photo-detectors multiplication factor is clarified versus reverse bias voltage at room temperature. Different avalanche photo-detectors dark current is measured against avalanche photo-detectors volume at room temperature. Various avalanche photo-detectors effective doping concentration is demonstrated against ambient temperature variations. Si/Ge/InGaAsP avalanche photo-detectors excess noise factor is demonstrated versus the ionization ratio at room temperature (T = 300 K) and different ambient temperature (T = 350 K and T = 400 K). Various avalanche photo-detectors excess noise factor is measured clearly versus the multiplication factor at room temperature. Si/Ge/InGaAsP avalanche photo-detectors excess noise factor is demonstrated versus reverse bias voltage at room temperature. Si/Ge/InGaAsP avalanche photo-detectors noise equivalent power is clarified versus multiplication factor at room temperature. Various avalanche photo-detectors noise equivalent power is studied versus temperature variations. Si/Ge/InGaAsP avalanche photo-detectors sensitivity is measured in relation to the temperature variations. Different avalanche photo-detectors sensitivity is demonstrated in relation to reverse bias voltage variations at room temperature.

Publisher

Walter de Gruyter GmbH

Link

https://www.degruyter.com/document/doi/10.1515/joc-2024-0099/pdf

Reference16 articles.

1. Eladl, SM. Modeling of ionizing radiation effect on optoelectronic-integrated devices (OEIDs). Microelectron J 2009;40:193–6. https://doi.org/10.1016/j.mejo.2008.07.008.

2. Wiczer, J, Fischer, T, Dawson, L, Osbourn, G, Zipperian, T, Barnes, C. Pulsed irradiation of optimized, mbe grown, AlGaAs/GaAs radiation hardened photodiodes. IEEE Trans Nucl Sci 1984;31:1477–82. https://doi.org/10.1109/tns.1984.4333533.

3. Wiczer, J, Dawson, L, Osbourn, G, Barnes, C. Permanent damage effects in si and AlGaAs/GaAs photodiodes. IEEE Trans Nucl Sci 1982;29:1539–44. https://doi.org/10.1109/tns.1982.4336400.

4. Nikolic, D, Vasic, A, Fetahovic, I, Stankovic, K, Osmokrovic, P. Photodiode behavior in radiation environment. Appl Math Inf Mech 2011;3:27–34.

5. Baccaro, S, Bateman, J, Cavallari, F, Ponte, V, Deiters, K, Denes, P, et al.. Radiation damage effect on avalanche photodiodes. In: CMS conference; 1998, vol 10:1–7 pp.