Study of the performance signature based ternary and quaternary III–V compounds for laser diodes in optical communication system

Abstract

Abstract This study outlines the performance based ternary and quaternary III–V compounds in optical communication system. We have employed aluminum dopant ratio to check the effects in the spectral and thermal performance characteristics of various structures of optical diode sources based ternary and quaternary III–V compounds. The laser diode threshold current, reflection loss, corner wavelength, and optical gain are tested under various dopant aluminum ratios. The laser diode rise time and data flow rate are examined under thermal effects and various dopant levels. The laser diode corner wavelength and reflection loss can be enhanced by the increase of aluminum dopant ratio. The basic Al x In1−x Sb laser diode structure is the best candidate according to its high flow data rates in compared to other laser structures under the same thermal effects.