Author:
Bisewski Damian,Myśliwiec Marcin,Górecki Krzysztof,Kisiel Ryszard,Zarębski Janusz
Abstract
Abstract
This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.
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