Driftgeschwindigkeit und Beweglichkeit von Elektronen in Silicium bei 4,2 °K in Abhängigkeit vom elektrischen Feld / Driftvelocity and Mobility of Electrons in Silicon at 4.2 °K in Dependence of Electric Field

Abstract

Abstract The pulse rise times of an n-type silicon surface barrier detector were measured at 4.2 °K. At this temperature the detector was fully depleted even at very low bias and the measured pulse rise times gave direct information about the driftvelocity and the mobility. Instead of E-0.5, an E-0.8 dependence of the mobility at moderate electric fields was found. At high electric fields agreement exists with theory.