Studying the effects of siloxane poisoning on a SnO<sub>2</sub> metal oxide semiconductor gas sensor in temperature cycled operation enabling self-monitoring and self-compensation-Reference-Cited by-同舟云学术

Studying the effects of siloxane poisoning on a SnO₂ metal oxide semiconductor gas sensor in temperature cycled operation enabling self-monitoring and self-compensation

Published:2023-10-12 Issue:11 Volume:90 Page:691-702
ISSN:0171-8096
Container-title:tm - Technisches Messen
language:en
Short-container-title:

Author:

Schultealbert Caroline¹^ORCID,Baur Tobias¹,Sauerwald Tilman¹,Schütze Andreas¹²^ORCID

Affiliation:

1. Lab for Measurement Technology , Saarland University , Campus A5.1 , Saarbrücken , 66123 , Germany

2. Fraunhofer-Institut für Verfahrenstechnik und Verpackung IVV , Giggenhauser Str. 35 , 85354 Freising , Germany

Abstract

Abstract This work studies poisoning by the cyclic siloxane octamethylcyclotetrasiloxane on a commercially available semiconductor gas sensor in TCO (temperature cycled operation). The data is evaluated using the Sauerwald-Baur model and the DSR method (differential surface reduction). The sensitivity towards several gases (volatile organic compounds, hydrogen and carbon monoxide) is evaluated and compared with a sensor in constant temperature operation mode. The physical and chemical processes on the sensitive layer as well as the resulting selectivity towards hydrogen are discussed. A feature is identified that can be derived from the Sauerwald-Baur model (the differential surface oxidation, DSO) and that quantitatively expresses the sensor condition regarding siloxane poisoning. With the help of this feature, a self-compensation of the sensor signal is demonstrated.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Instrumentation

Link

https://www.degruyter.com/document/doi/10.1515/teme-2023-0065/pdf

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