Design and Analysis of 3-Input NAND/NOR/XNOR Gate Based on 2D Photonic Crystals-Reference-Cited by-同舟云学术

Design and Analysis of 3-Input NAND/NOR/XNOR Gate Based on 2D Photonic Crystals

Published:2019-01-23 Issue:0 Volume:0 Page:
ISSN:0173-4911
Container-title:Journal of Optical Communications
language:en
Short-container-title:

Author:

Muthu K. Esakki¹,Jannath Ul Firthouse VN.²,Deepa S. Sorna¹,Raja A. Sivanantha³,Robinson S.⁴

Affiliation:

1. University VOC College of Engineering , Tuticorin , Tamilnadu , India

2. Madras Institute of Technology , Chennai , Tamilnadu , India

3. Alaggapa Chettiar Government College of Engineering & Technology , Karaikudi , Tamilnadu , India

4. Mount Zion College of Engineering & Technology , Pudukkottai , Tamilnadu , India

Abstract

Abstract In this paper, Two Dimensional (2D) Photonic Crystal (PhC) based 3-input all optical NOR, NAND and XNOR gates is proposed and designed. The proposed device is formed by the combination of line defects and square cavity. The performance of the device is analyzed using 2D Finite Difference Time Domain (FDTD) method. The band gap analysis is done by Plane Wave Expansion (PWE) method. The device has the lattice constant and refractive index of 616 nm and 3.46, respectively. The dimension of the proposed structure is about 12.5 µm*12 µm which is highly compact and suitable for photonic integrated circuits (PIC).

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://www.degruyter.com/document/doi/10.1515/joc-2018-0210/pdf

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