Author:
Prakash Amit,Hwang Hyunsang
Abstract
Abstract
Multilevel per cell (MLC) storage in resistive random access memory (ReRAM) is attractive in achieving high-density and low-cost memory and will be required in future. In this chapter, MLC storage and resistance variability and reliability of multilevel in ReRAM are discussed. Different MLC operation schemes with their physical mechanisms and a comprehensive analysis of resistance variability have been provided. Various factors that can induce variability and their effect on the resistance margin between the multiple resistance levels are assessed. The reliability characteristics and the impact on MLC storage have also been assessed.
Subject
General Physics and Astronomy,General Materials Science,General Chemistry
Reference196 articles.
1. Statistical fluctuations in HfOx resistivesSwitching memory: Part I – Set/reset variability;IEEE Trans Electron Devices,2014
2. Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance;Appl Phys Lett,2008
3. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance;Mater Sci Eng R Reports,2014
4. Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM;IEEE Electron Device Lett,2013
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