Abstraction NBTI model-Reference-Cited by-同舟云学术

Abstraction NBTI model

Published:2021-09-17 Issue:5-6 Volume:63 Page:299-310
ISSN:2196-7032
Container-title:it - Information Technology
language:en
Short-container-title:

Author:

Adolf Stephan¹,Nebel Wolfgang¹

Affiliation:

1. Carl von Ossietzky University of Oldenburg , Department of Computer Science, Division of Embedded Hardware/Software Systems , Oldenburg , Germany

Abstract

Abstract Negative Bias Temperature Instability (NBTI) is one of the major transistor aging effects, possibly leading to timing failures during run-time of a system. Thus one is interested in predicting this effect during design time. In this work an Abstraction NBTI model is introduced reducing the state space of trap-based NBTI models using two abstraction parameters, applying a state transformation to incorporate variable stress conditions. This transformation is faster than traditional approaches. Currently the conversion into estimated threshold voltage damages is a very time consuming process.

Publisher

Walter de Gruyter GmbH

Subject

General Computer Science

Link

https://www.degruyter.com/document/doi/10.1515/itit-2021-0005/pdf

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