Studies Of The G Factor For Cr4+ Ion In Bi4ge3o12 Crystal From Crystal-Field And Charge-Transfer Mechanisms

Author:

Wu Xiao-Xuan123,Zheng Wen-Chen23,Tang Sheng2

Affiliation:

1. Department of Physics, Civil Aviation Flying Institute of China, Guanghan 618307, P. R. China

2. Department of Material Science, Sichuan University, Chengdu 610064, P. R. China

3. International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, P. R. China

Abstract

The complete third-order perturbation formulas of the g factors g|| and g for 3d2 ions in tetragonal MX4 clusters have been obtained by a cluster approach. In these formulas, in addition to contributions to the g factors from the crystal-field mechanism in the crystal-field theory, the contributions from the charge-transfer mechanism are included. From these formulas, the g factors g|| and g for a Cr4+ ion in a Bi4Ge3O12 crystal are calculated. The results agree with the observed values. The calculated Δ gi(i = || or ⊥) value due to the charge-transfer is opposite in sign and about 20% greater than that due to the crystal-field mechanism. So, for the 3dn ions having a high valence in crystals, a reasonable explanation of the g factors should take both the crystal-field and charge-transfer mechanisms into account.

Publisher

Walter de Gruyter GmbH

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics

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