Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes

Author:

Çankaya Güven1,Uçar Nazım2

Affiliation:

1. Gaziosmanpaşa University, Faculty of Sciences and Arts, Physics Department, Tokat, Turkey

2. Süleyman Demirel University, Faculty of Sciences and Arts, Physics Department, Isparta, Turkey

Abstract

We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our measurements for p-type Si, the barrier heights and metal work functions show a linear relationship of current-voltage characteristics at room temperature with a slope (S=ϕbm) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5 · 1013 1/eV per cm2, and the average pinning position of the Fermi level as 0.661 eV below the conduction band

Publisher

Walter de Gruyter GmbH

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics

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