Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes

Abstract

We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our measurements for p-type Si, the barrier heights and metal work functions show a linear relationship of current-voltage characteristics at room temperature with a slope (S=ϕb/ϕm) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5 · 1013 1/eV per cm2, and the average pinning position of the Fermi level as 0.661 eV below the conduction band