Morphology and FT IR spectra of porous silicon-Reference-Cited by-同舟云学术

Morphology and FT IR spectra of porous silicon

Published:2017-12-01 Issue:7 Volume:68 Page:53-57
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Kopani Martin¹,Mikula Milan²,Kosnac Daniel³,Gregus Jan³,Pincik Emil⁴

Affiliation:

1. Institute of Medical Physics, Biophysics, Informatics and Telemedicine, Faculty of Medicine , Comenius University , Sasinkova 4, 811 08 , Bratislava , Slovakia

2. Faculty of Chemical and Food Technology of STU , Radlinskeho 9, 812 37 Bratislava , Slovakia

3. Faculty of Mathematics, Physics , Informatics of Comenius University , Bratislava , Slovakia

4. Institute of Physics of SAS , Dúbravská cesta 9, 845 11 Bratislava , Slovakia

Abstract

Abstract The morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHy complexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHy and SiFxHy complexes in the layer.

Publisher

Walter de Gruyter GmbH

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