About complex refractive index of black Si

Author:

Pinčík Emil1,Brunner Robert1,Kobayashi Hikaru2,Mikula Milan3

Affiliation:

1. Institute of Physics, SAS , Dúbravská cesta 9, 845 11 Bratislava , Slovakia

2. Institute of Scientific and Industrial Research , Osaka University , Mihogaoka, Ibaraki, Osaka 567-0047 , Japan

3. Faculty of Chemical and Food Technology of STU , Radlinského 9, 812 37 Bratislava , Slovakia

Abstract

Abstract The paper deals with the complex refractive index in the IR light region of two types of samples (i) as prepared black silicon, and (ii) thermally oxidized black silicon (BSi) nano-crystalline specimens produced both by the surface structure chemical transfer method using catalytic Ag evaporated spots (as prepared sample) and by the catalytic Pt catalytic mesh (thermally oxidized sample). We present, compare, and discuss the values of the IR complex refractive index obtained by calculation using the Kramers-Krönig transformation. Results indicate that small differences between optical properties of as prepared black Si and thermally oxidized BSi are given by: (i) – oxidation procedure, (ii) – thickness of the formed black Si layer, mainly, not by utilization of different catalytic metals, and by iii) the different thickness. Contamination of the surface by different catalytic metals contributes almost equally to the calculated values of the corresponding complex refractive index.

Publisher

Walter de Gruyter GmbH

Reference4 articles.

1. [1] K. Imamura, F. C. Franco, Jr. T. Matsumoto, and H. Kobayashi, “Ultra-low reflectivity polycrystalline silicon surfaces formed by surface structure chemical transfer method”, Appl. Phys. Lett., 103 (1) 2013 013110, doi:10.1063/1.4813089.10.1063/1.4813089

2. [2] M. Takahashi, T. Fukushima, Y. Seino, W.-B. Kim, K. Imamura and H. Kobayashi, “Surface Structure Chemical Transfer Method for Formation of Ultralow Reflectivity Si Surfaces”, J. Electrochem. Soc., 160(8) (2013) H443, doi:10.1149/2.044308jes.

3. [3] E. Pincik, R. Brunner, H. Kobayashi, M. Mikula, P. Vojtek, J. Greguš, Z. Zabudla, K. Imamura and P. Švec Jr., “The photoluminescence of multicolor silicon”, Journal of the Chinese Advanced Materials Society, vol. 4, no. 2, pp. 152-171, http://dx.doi.org/10.1080/22243682.2016.1151374.10.1080/22243682.2016.1151374

4. [4] D. Palik Edward (Ed.), Handbook of Optical Constants of Solids, Academic Press Inc., Orlando, 1985.

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