Charge Carrier Mobility Behavior in the SubPc/C60 Planar Heterojunction

Abstract

Abstract Structural arrangement and construction are the keys to electron/hole motion through organic semiconductor lattices. In this work, we focused on the disorder energy, temperature, and electric field effects on charge carrier mobilities using a Poole–Frenkel mobility model for SubPc/C60 devices. The results agree with those found in the literature. We observed important temperature, applied voltage, and disorder energy dependencies of the current-voltage characteristics and charge carrier mobilities; these characteristics have the Gunn curve form called negative conductivity, which has been reported in amorphous semiconductors.