Synthesis and properties of PI composite films using carbon quantum dots as fillers

Abstract

Abstract Polyimide (PI) is widely used in the field of microelectronics because of its excellent thermal, mechanical, optical, and electrical properties. With the development of electronics and information industry, PI as a dielectric material needs to possess low dielectric loss. PI/carbon quantum dots (PI/CQDs) composite films with low dielectric loss were prepared by introducing CQDs into PI matrix. At 25°C and 1 kHz voltage, the dielectric loss of pure PI film is about 0.0057. The dielectric loss of PI/CQDs composite film is about 0.0018, which is about 68% lower than that of pure PI film. The dielectric loss of PI/CQD composite film is greatly reduced while the mechanical properties and thermal properties of PI/CQDs composite film roughly remain unchanged. Due to the cross-linking structure formed between CQDs and PI molecular chain, the relative movement of PI molecular chain is hindered.