First-Principle Study of the Structural, Electronic, and Optical Properties of Cubic InN x P1–x Ternary Alloys under Hydrostatic Pressure

Author:

Hattabi I.1,Abdiche A.2,Moussa R.3,Riane R.4,Hadji K.5,Soyalp F.6,Varshney Dinesh7,Syrotyuk S.V.8,Khenata R.9

Affiliation:

1. Laboratoire Synthèse et Catalyse, Ibn Khaldoun Université de Tiaret, Postbox78-Zaaroura, 14000 Tiaret, Algeria

2. Applied Materials Laboratory, Research Center, University of Sidi-bel-Abbes, 22000 Sidi-bel-Abbes, Algeria , Tel.: +213 05 60 62 40 49

3. Physic Department, University of Sidi-bel-Abbes, Sidi-bel-Abbes 22000, Algeria

4. Applied Materials Laboratory, Research Center, University of Sidi-bel-Abbes, 22000 Sidi-bel-Abbes, Algeria

5. Science and Technology Département Ibn Khaldoun Université de Tiaret, Postbox78-Zaaroura, 14000 Tiaret, Algeria

6. Yüzüncü Yıl University, Faculty of Education, Department of Physics, Van 65080, Turkey

7. Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, India

8. Semiconductor Electronics Department, National University “Lviv Polytechnic”, S. Bandera str. 12, Lviv 79013, Ukraine

9. Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000 Mascara, Algerie

Abstract

Abstract In this article, we present results of the first-principle study of the structural, electronic, and optical properties of the InN, InP binary compounds and their related ternary alloy InN x P1–x in the zinc-blend (ZB) phase within a nonrelativistic full potential linearised augmented plan wave (FP-LAPW) method using Wien2k code based on the density functional theory (DFT). Different approximations of exchange–correlation energy were used for the calculation of the lattice constant, bulk modulus, and first-order pressure derivative of the bulk modulus. Whereas the lattice constant decreases with increasing nitride composition x. Our results present a good agreement with theoretical and experimental data. The electronic band structures calculated using Tran-Blaha-modified Becke–Johnson (TB-mBJ) approach present a direct band gap semiconductor character for InN x P1–x compounds at different x values. The electronic properties were also calculated under hydrostatic pressure for (P=0.00, 5.00, 10.0, 15.0, 20.0, 25.0 GPa) where it is found that the InP compound change from direct to indirect band gap at the pressure P≥7.80 GPa. Furthermore, the pressure effect on the dielectric function and the refractive index was carried out. Results obtained in our calculations present a good agreement with available theoretical reports and experimental data.

Publisher

Walter de Gruyter GmbH

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics

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