Affiliation:
1. Institut für Werkstoffe der Elektrotechnik der Ruhr-Universität Bochum
Abstract
Abstract
Well-developed phonon-structures are observed on Ta/Ta-Oxid/Ag and Nb/Nb-Oxid/Ag tunneling junctions, if the conditions of oxidation are suitably choosen. These structures are analyzed ac-cording to McMillan's numerical program and the results are discussed. From the nonlinear current-voltage characteristics in the normal state, informations are obtained on the electronic structure of the semiconducting oxid presenting the barrier. Impurity concentration leading to a nonideal semiconductor gap in the oxid, seems to be largely reduced if oxidation is performed with low oxygen pressure.
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics
Cited by
18 articles.
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