Quantitative Assessment of the Influence of Camera and Parameter Choice for Outdoor Electroluminescence Investigations of Silicon Photovoltaic Panels

Author:

Doll B.123,del Rivero E. Calderón4,Hepp J.123,Pickel T.3,Buerhop C.3,Knecht R.5,Camus C.6,Hauch J.13,Parisi J.7,Brabec C.J.138

Affiliation:

1. Friedrich-Alexander University Erlangen-Nürnberg , Faculty of Engineering, Materials for Electronics and Energy Technology , Erlangen , Germany

2. Graduate School in Advanced Optical Technologies , Erlangen , Germany

3. Helmholtz-Institut Erlangen-Nürnberg , Erlangen , Germany

4. SUNSET Energietechnik GmbH , Adelsdorf , Germany

5. Carl von Ossietzky University Oldenburg , Oldenburg , Germany

6. LayTec AG , Berlin , Germany

7. Carl von Ossietzky University of Oldenburg, Institute of Physics, Energy and Semiconductor Research Laboratory , Oldenburg , Germany

8. Bavarian Centre for Applied Energy Research , Erlangen , Germany

Abstract

Abstract With the spread of photovoltaics (PV) and increasing diversity in PV panel technology, quantitative comparison of the modules is highly desirable for consistent on-site quality assessment. Electroluminescence imaging reveals many defects, such as macroscopic crystal or electrical contact defects, but quantitative comparison outside the laboratory without controlled environment is still difficult, especially for different detector technologies. Here, we show how this problem can be addressed by adding reference spots in the module area: One passive dark spot and an active bright spot composed of a high-power back-contacted silicon PV cell. Those reference spots are used to evaluate the module’s electroluminescence signal under different environmental conditions and to establish comparable results. Additionally, the comparison of images acquired with different camera technology detectors, such as silicon and InGaAs, is realised for signal levels.

Publisher

Walter de Gruyter GmbH

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics

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