Affiliation:
1. Fraunhofer-Institut für Festkörpertechnologie, München
Abstract
Abstract
Thin layers of Mg2Si or CaSi2 (10-20 μm) on silicon substrates can be prepared by the reaction of the corresponding metal vapor with silicon wafers. The resulting poly crystal line silicides have a purity of more than 99.95%; their surface roughness is about 2 μm. The layer thickness and the dimensions of the crystallites may be controlled by the conditions of the preparation. An oriented growth on the <111>-silicon surface is observed in the case of CaSi2- The method described seems generally well suited for growing silicide layers of metals with high vapor pressure. The Mg2Si- and the CaSi2-layers were used as starting material in a special "sandwich"-epitaxy in order to prepare Mg- and Ca-doped Si-layers.
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics
Cited by
8 articles.
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