Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates-Reference-Cited by-同舟云学术

Marker Method in Studying the Defect Structure in Products of the Oxidation of Highly Disordered Substrates

Published:2016-01-01 Issue:1 Volume:35 Page:21-28
ISSN:0334-6455
Container-title:High Temperature Materials and Processes
language:
Short-container-title:

Author:

Grzesik Z.¹,Poczekajlo A.¹,Smola G.¹,Mrowec S.¹

Affiliation:

1. 1Faculty of Materials Science and Ceramics, Department of Physical Chemistry and Modelling, AGH University of Science and Technology, al. A. Mickiewicza 30, 30–059 Krakow, Poland

Abstract

AbstractThe interpretation of marker experiments in studying the formation mechanism and defect structure of higher oxides during oxidation of lower oxides, showing rather high deviations from stoichiometry, has been discussed. It has been shown that correct results can be obtained only if the concentration of point defects in the substrate is taken into account. Theoretical considerations presented in this paper have been illustrated by the experimental results obtained during sulphidation of highly disordered Co1-yS to form CoS2, as well as Ni1-yS to form NiS2.

Publisher

Walter de Gruyter GmbH

Subject

Physical and Theoretical Chemistry,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.degruyter.com/downloadpdf/journals/htmp/35/1/article-p21.xml

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