Surface Modification of Polyetheretherketone by Helium/nitrogen and Nitrous Oxide Plasma Enhanced Chemical Vapour Deposition

Author:

Kluska Stanisława1,Pamuła Elżbieta2,Jonas Stanisława1,Grzesik Zbigniew1

Affiliation:

1. 1Department of Physical Chemistry and Modeling, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, 30-059 Krakow, Poland

2. 2Department of Biomaterials, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, 30-059 Krakow, Poland

Abstract

AbstractThe surface of the polyetheretherketone (PEEK) samples was modified by the plasma enhanced chemical vapor deposition (PECVD) in the mixture of He and N2 as well as in the N2O atmosphere. Morphological characterization of the PEEK as well as its surface roughness, chemical structure, and surface free energy were investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and sessile drop technique, respectively. The highest increase in the polar component of the total surface energy was observed for PEEK modified by He+N2 plasma, which correlated with significant increase in the concentration of oxygen and nitrogen-containing chemical functionalities as revealed by XPS. For PEEK submitted to N2O plasma treatment significant changes in surface topography and increase in roughness were observed, but changes in surface chemistry and surface free energy were mild.

Publisher

Walter de Gruyter GmbH

Subject

Physical and Theoretical Chemistry,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3