Affiliation:
1. Faculty of Materials Science and Technology, Department of Physical Chemistry and Modelling, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059Kraków, Poland
2. Faculty of Mechanical Engineering and Aeronautics, Research and Development Laboratory for Aerospace Materials, Rzeszow University of Technology, al. Powstańców Warszawy 12, 35-959, Rzeszów, Poland
Abstract
AbstractIn this paper the doping effect has been used to indirectly calculate point defect concentration in metal-deficient Zn1-yO zinc oxide. The proposed method consists of determining the concentration of prevailing point defects in the studied oxide from the influence of chromium addition on the point defect situation in doped zinc oxide. It has been found that chromium addition into the crystal lattice of zinc oxide changes its ionic disorder, enabling calculation of predominant point defects in Zn1-yO. The concentration of predominant point defects in Zn1-yO is the following function of oxygen pressure and temperature:
$$\eqalign{\left[{\,{{\rm V''}_{\rm Zn}}\,} \right]\, &= \,{1 \over 2}\left[{\,{\rm h^ \bullet}\,} \right]\, = \,0.63 \cdot \,\rm p_{{O_2}}^{1/6}\, \cdot {K^{1/3}}\,_{}^{}\, \cr& = \,\,5.6 \cdot {10^{- 3}} \cdot \,\rm p_{{O_2}}^{1/6}\, \cdot \exp \left({- {{27\,kJ/mol} \over {RT}}} \right)\cdot}$$
Subject
Physical and Theoretical Chemistry,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
2 articles.
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