Analysis of radiation effects of semiconductor devices based on numerical simulation Fermi

Analysis of radiation effects of semiconductor devices based on numerical simulation Fermi–Dirac

Published:2022-01-01 Issue:1 Volume:11 Page:252-259
ISSN:2192-8029
Container-title:Nonlinear Engineering
language:en
Short-container-title:

Author:

Hu Zhanhan¹,Hernández Danaysa Macías²,Martinez Silega Nemuri³

Affiliation:

1. School of computing, North China Institute of Aerospace Engineering , Langfang , Hebei , 065000 , China

2. Universidad de Matanzas “Camilo Cienfuegos” , Matanzas , Cuba

3. Institute of Computer Technology and Information Security, Southern Federal University , Rostov-on-Don , Russia

Abstract

Abstract To study the radiation effect of Fermi–Dirac (F–D) semiconductor devices based on numerical simulation, two methods are used. One is based on the combination of F–D statistical method and computer simulation. The method discusses the influence of temperature and light energy on the carrier number by starting from an intrinsic silicon semiconductor and carries out computer simulation on the carrier number in intrinsic silicon semiconductor. TID Sim, a three-dimensional parallel solver for ionizing radiation effects of semiconductor devices, is developed. The ionization radiation damage of typical metal oxide semiconductor (MOS) FET NMOS and bipolar transistor GLPNP is simulated. It was proved that the variation trend was close to a straight line in the temperature range (278–358 K) studied in this article. The results are consistent with those of the statistical distribution of semiconductor carriers. This method is suitable for calculating the number of semiconductor carriers, and it is an effective method to study the problems related to carrier distribution.

Publisher

Walter de Gruyter GmbH

Subject

Computer Networks and Communications,General Engineering,Modeling and Simulation,General Chemical Engineering

Link

https://www.degruyter.com/document/doi/10.1515/nleng-2022-0020/pdf

Reference28 articles.

1. Umegami H, Ishibashi H, Nanamori K, Hattori F, Yamamoto M. Basic analysis of false turn-on phenomenon of power semiconductor devices with parasitic inductances. Electron Lett. 2016;52(13):1158–60.

2. Islam A, Nakai T, Onodera H. Statistical analysis and modeling of random telegraph noise based on gate delay measurement. IEEE Trans Semicond Manuf. 2017;30(3):216–26.

3. Schamel H, Eliasson B. On the correct implementation of fermi–dirac statistics and electron trapping in nonlinear electrostatic plane wave propagation in collisionless plasmas. Phys Plasmas. 2016;23(5):052114.

4. Rohde G, Stange A, Mueller A, Behrendt M, Oloff LP, Hanff K, et al. Decoding the ultrafast formation of a fermi–dirac distributed electron gas. Phys Rev Lett. 2018;121(25):256401.1–6.

5. Yarmoghaddam E, Haratipour N, Koester SJ, Rakheja S. A physics-based compact model for ultrathin black phosphorus FETs--Part I: Effect of contacts, temperature, ambipolarity, and traps. IEEE Trans Electr Dev. 2019;67(8):389–96.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation-induced degradation of silicon carbide MOSFETs – A review;Materials Science and Engineering: B;2024-02