Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications
Author:
Jin Kim Dong1, Oh Joon-Ho1, Soo Kim Han1, Soo Kim Young1, Jeong Manhee1, Goo Kang Chang1, Jin Jo Woo1, Choi Hyojeong2, Guk Kim Jong1, Hee Lee Seung1, Ho Ha Jang1
Affiliation:
1. Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeong-eup, Republic of Korea 580-185 2. WCU Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea, 440-746
Abstract
Abstract
TlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.
Publisher
Walter de Gruyter GmbH
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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