Resonant quenching of Raman scattering due to out-of-plane A1g/A′1 modes in few-layer MoTe2
Author:
Affiliation:
1. Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
2. LNCMI CNRS-UGA-UPS-INSA-EMFL, 25 rue des Martyrs, 38042 Grenoble, France
Abstract
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
Link
https://www.degruyter.com/document/doi/10.1515/nanoph-2016-0150/pdf
Reference34 articles.
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2. Room-temperature quantum Hall effect in graphene;Science,2007
3. Resonance Raman scattering in bulk 2H-MX2 (M=Mo, W; X=S, Se) and monolayer MoS2;J Appl Phys,2014
4. Raman scattering of few-layers MoTe2;2D Mater,2016
5. Resonance effects in the Raman scattering of monolayer and few-layer MoSe2;Phys Rev B,2016
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