Invisibility concentrator based on van der Waals semiconductor α-MoO3-Reference-Cited by-同舟云学术

Invisibility concentrator based on van der Waals semiconductor α-MoO3

Published:2021-11-30 Issue:2 Volume:11 Page:369-376
ISSN:2192-8614
Container-title:Nanophotonics
language:en
Short-container-title:

Author:

Hou Tao¹^ORCID,Tao Sicen¹,Mu Haoran²,Bao Qiaoliang³,Chen Huanyang¹^ORCID

Affiliation:

1. Department of Physics and Institute of Electromagnetics and Acoustics , Xiamen University , Xiamen 361005 , China

2. Songshan Lake Materials Laboratory , Dongguan 523808 , China

3. Shenzhen Exciton Science and Technology Ltd. , Shenzhen 518052 , P. R. China

Abstract

Abstract By combining transformation optics and van der Waals layered materials, an invisibility concentrator with a thin layer of α-MoO3 wrapping around a cylinder is proposed. It inherits the effects of invisibility and energy concentration at Fabry–Pérot resonance frequencies, with tiny scattering. Due to the natural in-plane hyperbolicity in α-MoO3, the challenges of experimental complexity and infinite dielectric constant can be resolved perfectly. Through analytical calculation and numerical simulations, the relevant functionalities including invisibility, energy concentration and illusion effect of the designed device are confirmed, which provides guidelines for the subsequent experimental verification in future.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

Link

https://www.degruyter.com/document/doi/10.1515/nanoph-2021-0557/pdf

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