A high-performance TE modulator/TM-pass polarizer using selective mode shaping in a VO2-based side-polished fiber

Author:

Heidari Mohsen1ORCID,Faramarzi Vahid1,Sharifi Zohreh2,Hashemi Mahdieh3,Bahadori-Haghighi Shahram4,Janjan Babak1,Abbott Derek5ORCID

Affiliation:

1. Department of Electrical and Computer Engineering , Tarbiat Modares University , 14115-116 Tehran , Iran

2. Department of Electrical and Computer Engineering , University of Victoria , Victoria , BC V8W 3P6 , Canada

3. Department of Physics, College of Science , Fasa University , Fasa 74617-81189 , Iran

4. School of Electrical and Computer Engineering , Shiraz University , Shiraz , 71348-51154 Iran

5. School of Electrical and Electronic Engineering , The University of Adelaide , Adelaide , SA 5005 , Australia

Abstract

Abstract The reversible insulating-to-conducting phase transition (ICPT) of vanadium dioxide (VO2) makes it a versatile candidate for the implementation of integrated optical devices. In this paper, a bi-functional in-line optical device based on a four-layer stack of PMMA/graphene/VO2/graphene deposited on a side-polished fiber (SPF) is proposed. The structure can be employed as an ultra-compact TE modulator or a TM-pass polarizer, operating at 1.55 μm. We show that the ICPT characteristic can be used for polarization-selective mode shaping (PSMS) to manipulate orthogonal modes separately. On the one hand, as an optical modulator, the PSMS is used to modify mode profiles so that the TE mode attenuation is maximized in the off-state (and IL is minimized in the on-state), while the power carried by the TM mode remains unchanged. As a result, a TE modulator with an ultrahigh extinction ratio (ER) of about ER = 165 dB/mm and a very low insertion loss (IL) of IL = 2.3 dB/mm is achieved. On the other hand, the structure can act as a TM-pass polarizer featuring an extremely high polarization extinction ratio (PER) of about PER = 164 dB/mm and a low TM insertion of IL = 3.86 dB/mm. The three-dimensional heat transfer calculation for the ICPT process reveals that the response time of the modulator is in the order of few nanoseconds. Moreover, the required bias voltage of the proposed device is calculated to be as low as 1.1 V. The presented results are promising a key step towards the realization of an integrated high-performance in-line modulator/polarizer.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

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