High-efficiency SOI-based metalenses at telecommunication wavelengths

Author:

Ryu Taesu1,Kim Moohyuk2,Hwang Yongsop34ORCID,Kim Myung-Ki2ORCID,Yang Jin-Kyu13ORCID

Affiliation:

1. Department of Optical Engineering , Kongju National University , Cheonan , 31080 , Republic of Korea

2. KU‐KIST Graduate School of Converging Science and Technology , Korea University , Seoul , 02841 , Republic of Korea

3. Institute of Application and Fusion for Light, Kongju National University , Cheonan , 31080 , Republic of Korea

4. Laser Physics and Photonics Devices Lab, STEM , University of South Australia , Mawson Lakes , SA 5095 , Australia

Abstract

Abstract We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize high efficiency. A metasurface with a Si/ma-N disk array was numerically investigated to design a metalens that showed that a Si/ma-N metalens could focus the incident beam six times stronger than a Si metalens without ma-N. Metalenses with a thick ma-N layer have been experimentally demonstrated to focus the beam strongly at the focal point and have a long depth of field at telecommunication wavelengths. A short focal length of 10 μm with a wavelength-scale spot diameter of approximately 2.5 μm was realized at 1530 nm. This miniaturized high-efficiency metalens with a short focal length can provide a platform for ultrasensitive sensors on silicon photonic IC.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

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