Negative index metamaterial at ultraviolet range for subwavelength photolithography

Author:

Jin Qijian12,Liang Gaofeng1ORCID,Kong Weijie2,Liu Ling2,Wen Zhongquan1ORCID,Zhou Yi1,Wang Changtao2,Chen Gang1,Luo Xiangang2ORCID

Affiliation:

1. Key Laboratory of Optoelectronic Technology & Systems (Chongqing University), Ministry of Education , and College of Optoelectronic Engineering, Chongqing University , Chongqing 400044 , China

2. State Key Lab of Optical Technologies on Nano-fabrication and Micro-engineering , Institute of Optics and Electronics, Chinese Academy of Sciences , Chengdu 610209 , China

Abstract

Abstract A negative index metamaterial (NIM) at ultraviolet range is constructed with stacked plasmonic waveguides. Based on the waveguides performing antisymmetric modes, the negative refractions of both wavevector and energy flow are realized when a TM-polarized light with a wavelength of 365 nm incidents on the plane of the layers. It is proved that the NIM could be introduced into subwavelength photolithography for extending working distance. Both theoretical and experimental results indicate that the patterns with a feature size of 160 nm can be reproduced in photoresist with a 100 nm-thick air working distance. Moreover, arbitrary two-dimensional patterns with a depth reach 160 nm can be obtained without diffraction fringe by employing a nonpolarized light. This design gives new insights into the manipulation of light. The improved working distance, well-shaped patterns over large area present an innovative method for improving subwavelength photolithography.

Funder

Natural Science Foundation of Chongqing

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

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