Gate-tunable metafilm absorber based on indium silicon oxide-Reference-Cited by-同舟云学术

Gate-tunable metafilm absorber based on indium silicon oxide

Published:2019-09-20 Issue:10 Volume:8 Page:1803-1810
ISSN:2192-8614
Container-title:Nanophotonics
language:
Short-container-title:

Author:

Zhao Hongwei¹,Zhang Ran²,Chorsi Hamid T.¹,Britton Wesley A.²,Chen Yuyao³,Iyer Prasad P.¹,Schuller Jon A.¹,Negro Luca Dal²³⁴,Klamkin Jonathan¹

Affiliation:

1. Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA

2. Division of Material Science and Engineering, Boston University, Brookline, MA 02446, USA

3. Department of Electrical and Computer Engineering and Photonics Center, Boston University, Boston, MA 02215, USA

4. Department of Physics, Boston University, Boston, MA 02215, USA

Abstract

AbstractIn this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured.

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

Link

https://www.degruyter.com/document/doi/10.1515/nanoph-2019-0190/pdf

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