2D tellurene/black phosphorus heterojunctions based broadband nonlinear saturable absorber

Author:

Yan Bingzheng1,Li Guoru1,Shi Bingnan1,Liu Junting1,Nie Hongkun1,Yang Kejian12,Zhang Baitao12,He Jingliang12

Affiliation:

1. State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, PR China

2. Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao, 266237, PR China

Abstract

AbstractTwo-dimensional (2D) mono-elemental materials (Xenes) show remarkable potential in the fields of fundamental science and technology, have been regarded as a wide range of building blocks for electronic technologies due to their unique chemical, physical, electrical, and optical properties. Here, 2D tellurene/black phosphorus (Te/BP) heterojunctions are successfully fabricated through liquid-phase exfoliation (LPE) method. Their nonlinear optical absorption properties at 1.0, 2.0, and 2.8 μm have been studied by an open-aperture Z-scan method. The results revealed the excellent broadband saturable absorption responses of the prepared BP/Te heterojunctions, which are further confirmed by using them as saturable absorbers (SAs) for passively Q-switched all-solid-state lasers operating at 1.0, 2.0, and 2.8 μm, respectively. In particular, 1.04 μm continuous-wave (CW) mode-locked lasers with a pulse width of 404 fs is realized for the first time, to our best knowledge. Our work indicates that 2D Xenes especially 2D Xenes based heterojunctions have great potential in the fields of pulsed laser generation/modulation and other optoelectronic and photonic devices.

Funder

Department of Science and Technology of Shandong Province

Shenzhen Science and Technology Innovation Commission

National Natural Science Foundation of China

Shandong University

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

Reference120 articles.

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