Plasmonic signal modulation at sub-GHz frequency via on-chip integration of tunnel junctions-Reference-Cited by-同舟云学术

Plasmonic signal modulation at sub-GHz frequency via on-chip integration of tunnel junctions

Published:2024-01-02 Issue:2 Volume:13 Page:209-216
ISSN:2192-8606
Container-title:Nanophotonics
language:en
Short-container-title:

Author:

Wang Fangwei¹,Huang Baohu¹,Liu Yan¹,Gao Siping¹,Guo Yongxin¹,Zhang Qian²³^ORCID

Affiliation:

1. National University of Singapore , Singapore , Singapore

2. National University of Singapore (Chongqing) Research Institute , Chongqing 401123 , China

3. School of Chemistry and Chemical Engineering , Chongqing University , Chongqing 400044 , China

Abstract

Abstract Plasmonic technology offers one of the most promising solutions to achieve on-chip integration of nanoscale and fast modulation circuits using surface plasmon polaritons (SPPs) as the information carriers. However, the potential of modulation speed of plasmonic signals has not been fully tapped. In this paper, we have demonstrated the plasmonic signal can be modulated at the bandwidth of sub-GHz (>100 MHz) via the on-chip integration of tunnel junctions. We also find that the lifetime of tunnel junctions under AC conditions can be improved significantly compared with the DC counterparts, which allows us to investigate and visualize the real-time breakdown process of tunnel junctions. Our implementation of plasmonic signal modulation at sub-GHz frequency paves the way toward potential industrial applications of on-chip plasmonic circuits.

Funder

National Research Foundation Singapore

Joint Foundation of Key Laboratory of Shanghai Jiao Tong University-Xidian University

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

Link

https://www.degruyter.com/document/doi/10.1515/nanoph-2023-0720/pdf

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