Prominently enhanced luminescence from a continuous monolayer of transition metal dichalcogenide on all-dielectric metasurfaces
Author:
Iwanaga Masanobu1ORCID, Yang Xu1ORCID, Karanikolas Vasilios1ORCID, Kuroda Takashi1ORCID, Sakuma Yoshiki1ORCID
Affiliation:
1. National Institute for Materials Science (NIMS) , 1-1 Namiki , Tsukuba 305-0044 , Japan
Abstract
Abstract
2D materials such as transition metal dichalcogenides (TMDCs) are a new class of atomic-layer materials possessing optical and electric properties that significantly depend on the number of layers. Electronic transitions can be manipulated in artificial resonant electromagnetic (EM) fields using metasurfaces and other designed nanostructures. Here, we demonstrate prominently resonant enhancement in the photoluminescence (PL) of atomic monolayer, WS2, doped with a small quantity of Mo. The excitonic PL showed a strong enhancement effect on a higher-order magnetic resonance of all-dielectric metasurfaces consisting of periodic arrays of Si nanopellets. The PL intensity witnessed a 300-fold enhancement compared to the reference PL intensity on a flat silicon dioxide (SiO2) layer, which suggests a drastic change in the dynamics of photoexcited states. Confocal PL microscopy and the analysis revealed that the single photons were coherently emitted from the TMDC monolayer on the metasurface. Furthermore, examining the PL lifetime in the ps and ns timescales clarified two exponential components at the prominent exciton PL: a short-time component decaying in 22 ps and a long-time component lasting over 10 ns. Therefore, we can infer that the radiative components were significantly activated in the TMDC monolayer on the metasurfaces in comparison to the reference monolayer on a flat SiO2 layer.
Funder
Acquisition, Technology & Logistic Agency National Institute for Materials Science Japan Society for the Promotion of Science Tohoku University
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
Reference53 articles.
1. A. Splendiani, L. Sun, Y. Zhang, et al.., “Emerging photoluminescence in monolayer MoS2,” Nano Lett., vol. 10, no. 4, pp. 1271–1275, 2010. https://doi.org/10.1021/nl903868w. 2. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett., vol. 105, no. 13, p. 136805, 2010. https://doi.org/10.1103/physrevlett.105.136805. 3. Y. Fu, D. He, J. He, et al.., “Effect of dielectric environment on excitonic dynamics in monolayer WS2,” Adv. Mater. Interfaces, vol. 6, no. 23, p. 1901307, 2019. https://doi.org/10.1002/admi.201901307. 4. A. O. A. Tanoh, J. Alexander-Webber, J. Xiao, et al.., “Enhancing photoluminescence and mobilities in WS2 monolayers with oleic acid ligands,” Nano Lett., vol. 19, no. 9, pp. 6299–6307, 2019. https://doi.org/10.1021/acs.nanolett.9b02431. 5. K. M. McCreary, A. T. Hanbicki, S. Singh, et al.., “The effect of preparation conditions on Raman and photoluminescence of monolayer WS2,” Sci. Rep., vol. 6, p. 35154, 2016. https://doi.org/10.1038/srep35154.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
|
|