A compact plasmonic MOS-based 2×2 electro-optic switch-Reference-Cited by-同舟云学术

A compact plasmonic MOS-based 2×2 electro-optic switch

Published:2015-01-01 Issue:3 Volume:4 Page:261-268
ISSN:2192-8614
Container-title:Nanophotonics
language:
Short-container-title:

Author:

Ye Chenran¹,Liu Ke¹²,Soref Richard A.³,Sorger Volker J.¹

Affiliation:

1. 1Department of Electrical & Computer Engineering, The George Washington University, 801 22nd Street NW, Washington, DC 20052, USA

2. 2The Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, P.R. China

3. 3College of Science and Engineering, The University of Massachusetts Boston, 100 Morrissey Blvd., Boston, MA

Abstract

Abstract We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

Link

https://www.degruyter.com/document/doi/10.1515/nanoph-2015-0010/pdf

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