Tailoring photoluminescence of WS2-microcavity coupling devices in broad visible range
Author:
Zhao Le-Yi1, Wang Hai2ORCID, Liu Tian-Yu2, Li Fang-Fei1, Zhou Qiang1, Wang Hai-Yu2
Affiliation:
1. Synergetic Extreme Condition High-Pressure Science Center, State Key Laboratory of Superhard Materials , College of Physics, Jilin University , Changchun 130012 , China 2. State Key Laboratory of Integrated Optoelectronics , College of Electronic Science and Engineering, Jilin University , 2699 Qianjin Street , Changchun 130012 , China
Abstract
Abstract
Most of the previous TMDC-photon coupling devices were mainly based on A exciton due to its high oscillator strength and large exciton binding energy. Less effort has been focused on the modulation of the emission of B exciton and Rydberg states in TMDCs, especially in monolayer WS2. Here, we demonstrate that the photoluminescence (PL) emission of WS2-microcavity coupling devices can be tailored in a broad visible wavelength range (490 nm–720 nm). In contrast to the intrinsic PL emission of monolayer WS2, 25-fold enhanced B exciton emission and significant PL emission from the 2s Rydberg state can be observed. From the transient absorption (TA) measurements, the strongly coupled hybrid states based on B exciton can be remarkably fingerprinted. Furthermore, the strongly enhanced PL emission from the coupled B exciton has been demonstrated due to the strongly increased lower polariton (LP) state population and the internal conversion pathway being blocked in the strong coupling regime. Besides, the remarkable PL emission from the 2s Rydberg state is also revealed and confirmed by the additional ground state bleaching signal in TA spectra. These physical mechanisms about tailoring the PL emission in low dimensional TMDCs can provide significant references for constructing highly efficient optoelectronic devices.
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
Reference43 articles.
1. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett., vol. 105, pp. 1–4, 2010. 2. M. Amani, D. H. Lien, D. Kiriya, et al.., “Near-unity photoluminescence quantum yield in MoS2,” Science, vol. 350, pp. 1065–1068, 2015. https://doi.org/10.1126/science.aad2114. 3. B. Wu, H. H. Zheng, S. F. Li, et al.., “Evidence for moire intralayer excitons in twisted WSe2/WSe2 homobilayer superlattices,” Light-Sci. Appl., vol. 11, pp. 1–8, 2022. https://doi.org/10.1038/s41377-022-00854-0. 4. D. Shin, H. Huebner, U. De Giovannini, H. Jin, A. Rubio, and N. Park, “Phonon-driven spin-Floquet magneto-valleytronics in MoS2,” Nat. Commun., vol. 9, pp. 1–8, 2018. https://doi.org/10.1038/s41467-018-02918-5. 5. L. Yuan and L. Huang, “Exciton dynamics and annihilation in WS2 2D semiconductors,” Nanoscale, vol. 7, pp. 7402–7408, 2015. https://doi.org/10.1039/c5nr00383k.
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