Engineering Optical Activity of Semiconductor Nanocrystals via Ion Doping-Reference-Cited by-同舟云学术

Engineering Optical Activity of Semiconductor Nanocrystals via Ion Doping

Published:2016-09-01 Issue:4 Volume:5 Page:573-578
ISSN:2192-8614
Container-title:Nanophotonics
language:
Short-container-title:

Author:

Tepliakov Nikita V.¹²,Baimuratov Anvar S.¹²,Gun’ko Yurii K.³⁴,Baranov Alexander V.⁴,Fedorov Anatoly V.⁴,Rukhlenko Ivan D.¹²

Affiliation:

1. 1Modeling and Design of Nanostructures Laboratory, ITMO University, Saint Petersburg 197101, Russian Federation

2. 2Monash University, Clayton Campus, Victoria 3800, Australia

3. 3School of Chemistry and CRANN Institute, Trinity College, Dublin, Dublin 2, Ireland

4. 4ITMO University, Saint Petersburg 197101, Russian Federation

Abstract

AbstractControlling the strength of enantioselective interaction of chiral inorganic nanoparticles with circularly polarized light is an intrinsically interesting subject of contemporary nanophotonics. This interaction is relatively weak, because the chirality scale of nanoparticles is much smaller than the optical wavelength. Here we theoretically demonstrate that ion doping provides a powerful tool of engineering and enhances optical activity of semiconductor nanocrystals. We show that by carefully positioning ionic impurities inside the nanocrystals, one can maximize the rotatory strengths of intraband optical transitions, and make them 100 times larger than the typical rotatory strengths of small chiral molecules.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

Link

https://www.degruyter.com/document/doi/10.1515/nanoph-2016-0034/pdf

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