Optical, photonic and optoelectronic properties of graphene, h-BN and their hybrid materials

Author:

Wang Jingang1234,Ma Fengcai1,Liang Wenjie3,Wang Rongming2,Sun Mengtao125

Affiliation:

1. Department of Chemistry and Physics, Liaoning University, Shenyang 110036, People’s Republic of China

2. Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China

3. Beijing National Laboratory for Condensed Matter Physics, Beijing Key Laboratory for Nanomaterials and Nanodevices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China

4. Department of Physics, Shenyang Aerospace University, Shenyang 110036, People’s Republic of China

5. Beijing National Laboratory for Condensed Matter Physics, Beijing Key Laboratory for Nanomaterials and Nanodevices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China, email: mtsun@iphy.ac.cn

Abstract

AbstractBecause of the linear dispersion relation and the unique structure of graphene’s Dirac electrons, which can be tuned the ultra-wide band, this enables more applications in photonics, electronics and plasma optics. As a substrate, hexagonal boron nitride (h-BN) has an atomic level flat surface without dangling bonds, a weak doping effect and a response in the far ultraviolet area. So the graphene/h-BN heterostructure is very attractive due to its unique optical electronics characteristics. Graphene and h-BN which are stacked in different ways could open the band gap of graphene, and form a moiré pattern for graphene on h-BN and the superlattice in the Brillouin zone, which makes it possible to build photoelectric devices.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

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