Revealing defect-bound excitons in WS2 monolayer at room temperature by exploiting the transverse electric polarized wave supported by a Si3N4/Ag heterostructure

Author:

Li Shulei1ORCID,Deng Fu2,Zhou Lidan3,Lin Zhenxu4,Panmai Mingcheng4,Liu Shimei4ORCID,Mao Yuheng4,Luo Jinshan4,Xiang Jin5,Dai Jun1,Zheng Yunbao1,Lan Sheng4

Affiliation:

1. School of Optoelectronic Engineering, Guangdong Polytechnic Normal University , Guangzhou 510665 , China

2. Department of Physics , Hong Kong University of Science and Technology , Kowloon , Hong Kong , China

3. State Key Laboratory of Optoelectronic Materials and Technologies and School of Electronics and Information Technology, Sun Yat-Sen University , Guangzhou 51006 , China

4. Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University , Guangzhou 510006 , China

5. Key Laboratory of Optoelectronic Technology and Systems (Chongqing University), Ministry of Education, School of Optoelectronic Engineering, Chongqing University , Chongqing 400044 , China

Abstract

Abstract Two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayers are promising materials for light-emitting devices due to their excellent electric and optical properties. However, defects are inevitably introduced in the fabrication of TMDC monolayers, significantly influencing their emission properties. Although photoluminescence (PL) is considered as an effective tool for investigating the defects in TMDC monolayers. However, the PL from the defect-bound excitons is revealed only at low temperatures. Here, we show that the PL from the defect-bound excitons in a WS2 monolayer can be effectively revealed at room temperature by exploiting the transverse electric polarized wave supported by a Si3N4/Ag heterostructure. It is revealed that the defect-bound excitons in all possible positions of the WS2 monolayer can be effectively excited by the TE wave with significantly enhanced in-plane electric field localized on the surface of the Si3N4 layer. In addition, the emission from defect-bound excitons can propagate to the collection point with small attenuation. More importantly, the exciton dynamics in the WS2 monolayer can be modified by the Si3N4/Ag heterostructure, allowing the simultaneous excitation of neutral excitons, charge excitons (trions), and defect-bound excitons in the WS2 monolayer attached on the Si3N4/Ag heterostructure. We inspect the PL spectra obtained at different positions and find that the relative intensity of defect-bound excitons depends on the collection position. We also examine the dependences of the PL intensity and bandwidth on the excitation power for the three types of excitons. It is found that they exhibit different behaviors from those observed in the optical measurements by using the traditional excitation method. Our findings suggest a new way for exciting and studying the dynamics of multi-excitons at room temperature and indicate the potential applications of the TE wave in probing the defects in TMDC monolayers.

Funder

Start-Up Funding of Guangdong Polytechnic Normal University

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

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