Resonant inelastic tunneling using multiple metallic quantum wells-Reference-Cited by-同舟云学术

Resonant inelastic tunneling using multiple metallic quantum wells

Published:2023-06-21 Issue:16 Volume:12 Page:3313-3321
ISSN:2192-8614
Container-title:Nanophotonics
language:en
Short-container-title:

Author:

Zhang Yiyun¹²³,Lepage Dominic⁴,Feng Yiming¹²³,Zhao Sihan⁵^ORCID,Chen Hongsheng¹²³^ORCID,Qian Haoliang¹²³^ORCID

Affiliation:

1. Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center , Zhejiang University , Hangzhou 310027 , China

2. International Joint Innovation Center, Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang , The Electromagnetics Academy at Zhejiang University, Zhejiang University , Haining 314400 , China

3. Jinhua Institute of Zhejiang University, Zhejiang University , Jinhua 321099 , China

4. Institut Quantique, Université de Sherbrooke , 2500 Boulevard de l’Université , Sherbrooke , Québec J1K 2R1 , Canada

5. Interdisciplinary Center for Quantum Information, State Key Laboratory of Silicon Materials, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics , Zhejiang University , Hangzhou 310058 , China

Abstract

Abstract Tunnel nanojunctions based on inelastic electron tunneling (IET) have been heralded as a breakthrough for ultra-fast integrated light sources. However, the majority of electrons tend to tunnel through a junction elastically, resulting in weak photon-emission power and limited efficiency, which have hindered their practical applications to date. Resonant tunneling has been proposed as a way to alleviate this limitation, but photon-emissions under resonant tunneling conditions have remained unsatisfactory for practical IET-based light sources due to the inherent contradiction between high photon-emission efficiency and power. In this work, we introduce a novel approach that leverages much stronger resonant tunneling enhancement achieved by multiple metallic quantum wells, which has enabled the internal quantum efficiency to reach ∼1 and photon-emission power to reach ∼0.8 µW/µm2. Furthermore, this method is applicable with different electronic lifetimes ranging from 10 fs to 100 fs simultaneously, bringing practical implementation of IET-based sources one step closer to reality.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

Link

https://www.degruyter.com/document/doi/10.1515/nanoph-2023-0231/pdf

Reference37 articles.

1. S. Paesani, M. Borghi, S. Signorini, A. Maïnos, L. Pavesi, and A. Laing, “Near-ideal spontaneous photon sources in silicon quantum photonics,” Nat. Commun., vol. 11, p. 2505, 2020. https://doi.org/10.1038/s41467-020-16187-8.

2. R.-M. Ma and R. F. Oulton, “Applications of nanolasers,” Nat. Nanotechnol., vol. 14, pp. 12–22, 2019. https://doi.org/10.1038/s41565-018-0320-y.

3. D. Lu, H. Qian, K. Wang, et al.., “Nanostructuring multilayer hyperbolic metamaterials for ultrafast and bright green InGaN quantum wells,” Adv. Mater., vol. 30, p. 1706411, 2018. https://doi.org/10.1002/adma.201706411.

4. J. Lambe and S. L. McCarthy, “Light emission from inelastic electron tunneling,” Phys. Rev. Lett., vol. 37, pp. 923–925, 1976. https://doi.org/10.1103/physrevlett.37.923.

5. M. Parzefall, Á. Szabó, T. Taniguchi, K. Watanabe, M. Luisier, and L. Novotny, “Light from van der Waals quantum tunneling devices,” Nat. Commun., vol. 10, p. 292, 2019. https://doi.org/10.1038/s41467-018-08266-8.