Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials-Reference-Cited by-同舟云学术

Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials

Published:2019-11-29 Issue:1 Volume:9 Page:93-100
ISSN:2192-8614
Container-title:Nanophotonics
language:
Short-container-title:

Author:

Meng Linghai¹,Wu Xian-Gang¹,Ma Sai¹,Shi Lifu¹,Zhang Mengjiao²,Wang Lingxue²,Chen Yu¹,Chen Qi¹,Zhong Haizheng¹

Affiliation:

1. MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China

2. School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China

Abstract

AbstractLuminescence downshifting (LDS) layer integration has been proven to be an efficient way to ameliorate the poor UV-blue spectral response and improve the power conversion efficiency (PCE) for solar cells (SCs). By employing an in situ fabricated CH3NH3PbBr3 (CH3NH3 = methylammonium, MAPbBr3) quantum dot/polyacrylonitrile (PAN) composite film as the LDS layer, we observed a clear enhancement in the external quantum efficiency (EQE) for silicon SCs, predominantly in the UV-blue region. With a theoretically calculated intrinsic LDS efficiency (ηLDS) of up to 72%, silicon SCs with the LDS layer exhibited an absolute value of 1% for PCE improvement in comparison to those without the LDS layer. The combination of easy fabrication and low cost makes it a practical way to achieve photovoltaic enhancement of Si-based SCs.

Funder

National Natural Science Foundation of China

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

Link

https://www.degruyter.com/document/doi/10.1515/nanoph-2019-0320/pdf

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