Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis-Reference-Cited by-同舟云学术

Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

Published:2017-03-14 Issue:7 Volume:105 Page:569-576
ISSN:2193-3405
Container-title:Radiochimica Acta
language:en
Short-container-title:

Author:

Karches Barbara¹,Schön Jonas²,Gerstenberg Heiko³,Hampel Gabriele¹,Krenckel Patricia²,Plonka Christian¹,Ponsard Bernard⁴,Riepe Stephan²,Stieghorst Christian¹,Wiehl Norbert⁵

Affiliation:

1. Institute for Nuclear Chemistry , Johannes Gutenberg University of Mainz , D-55128 Mainz , Germany

2. Fraunhofer Institute for Solar Energy Systems , D-79110 Freiburg , Germany

3. Heinz-Maier-Leibniz Zentrum , Technische Universität München , D-85748 Garching , Germany

4. Belgian Nuclear Research Centre (SCK•CEN) , BR2 reactor , B-2400 Mol , Belgium

5. Institute for Nuclear Chemistry , Johannes Gutenberg University of Mainz , D-55128 Mainz , Germany , Tel.: +49 6131 3924507, Fax: +49 6131 3925253

Abstract

Abstract In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations.

Publisher

Walter de Gruyter GmbH

Subject

Physical and Theoretical Chemistry

Link

https://www.degruyter.com/document/doi/10.1515/ract-2016-2687/pdf

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