Advancing Silicon Carbide Electronics Technology I
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Materials Research Forum LLC
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults;Solid State Phenomena;2024-08-26
2. Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET;Solid State Phenomena;2024-08-26
3. Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization;Solid State Phenomena;2024-08-22
4. Temperature Dependence of 4H-SiC Gate Oxide Breakdown and <i>C</i>-<i>V</i> Properties from Room Temperature to 500 °C;Solid State Phenomena;2024-08-21
5. Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation;Solid State Phenomena;2024-08-21
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