High-speed Single-electron Transfer toward High-accuracy Current Standards
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Affiliation:
1. NTT Basic Research Laboratories, NTT Corporation
Publisher
NTT Science and Core Technology Laboratory Group
Reference4 articles.
1. A. Fujiwara, K. Nishiguchi, and Y. Ono, “Nanoampere Charge Pump by Single-electron Ratchet Using Silicon Nanowire Metal-oxide-semiconductor Field-effect Transistor,” Appl. Phys. Lett., Vol. 92, No. 4, 042102, 2008.
2. G. Yamahata, T. Karasawa, and A. Fujiwara, “Gigahertz Single-hole Transfer in Si Tunable-barrier Pumps,” Appl. Phys. Lett., Vol. 106, No. 2, 023112, 2015.
3. G. Yamahata, K. Nishiguchi, and A. Fujiwara, “Accuracy Evaluation and Mechanism Crossover of Single-electron Transfer in Si Tunable-barrier Turnstiles,” Phys. Rev. B, Vol. 89, No. 16, 165302, 2014.
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1. Ultimate Control of Electronic Properties in Low-dimensional Semiconductors;NTT Technical Review;2015-08
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