Electrical characterization of interface stability between magnesium and selenium-passivatedn-type silicon (001)
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207210500205188
Reference13 articles.
1. Low ohmic contact to silicon with a magnesium/aluminum layered metallization
2. Surface‐State and Interface Effects in Schottky Barriers at n‐Type Silicon Surfaces
3. Contact resistivity of some magnesium/silicon and magnesium silicide/silicon structures
4. Semiconductor-surface restoration by valence-mending adsorbates: Application to Si(100):S and Si(100):Se
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1. Broad infrared absorption band through ion beam hyperdoping of silicon with selenium;Applied Surface Science;2023-12
2. Indium oxide ceramics doped by selenium for one-electrode gas sensors;Sensors and Actuators B: Chemical;2012-11
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4. Adsorption of selenium atoms at the Si(111)-7×7 surface: A combination of scanning tunnelling microscopy and density functional theory studies;Chemical Physics;2011-04
5. X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001);Journal of Applied Physics;2007-10-15
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